Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion: Fid-Bau Portal

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

Agarwal, A. / Gossmann, H.-J. / Eaglesham, D. J. / Pelaz, L. / Jacobson, D. C. / Poate, J. M. / Haynes, T. E.

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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

Agarwal, A. / Gossmann, H.-J. / Eaglesham, D. J. / Pelaz, L. / Jacobson, D. C. / Poate, J. M. / Haynes, T. E.

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

Agarwal, A. / Gossmann, H.-J. / Eaglesham, D. J. / Pelaz, L. / Jacobson, D. C. / Poate, J. M. / Haynes, T. E.

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Title:

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

Contributors:

Agarwal, A. (author) / Gossmann, H.-J. (author) / Eaglesham, D. J. (author) / Pelaz, L. (author) / Jacobson, D. C. (author) / Poate, J. M. (author) / Haynes, T. E. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 253 ; 269-274

Publication date:

1998-01-01

Size:

6 pages

ISSN:

0921-5093

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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