Effect of inert gas additive species on Cl"2 high density plasma etching of compound semiconductors - Part II. InP, InSb, InGaP and InGaAs

Hahn, Y.B. / Hays, D.C. / Cho, H. et al. | British Library Online Contents | 1999

High ion density dry etching of compound semiconductors

Pearton, S. J. | British Library Online Contents | 1996

Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs

Maeda, T. / Lee, J.W. / Shul, R.J. et al. | British Library Online Contents | 1999

GaSb/AlGaSb Compound Semiconductors Grown by MOCVD for Optoelectronic Applications

Ramelan, A. H. / Yahya, I. / Prasodjo et al. | British Library Online Contents | 2006

Titanium carbide etching in high density plasma

Hsiao, R. / Miller, D. / Nguyen, S. et al. | British Library Online Contents | 1999