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Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs

Maeda, T. / Lee, J.W. / Shul, R.J. / Han, J. / Hong, J. / Lambers, E.S. / Pearton, S.J. / Abernathy, C.R. / Hobson, W.S.

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Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs

Maeda, T. / Lee, J.W. / Shul, R.J. / Han, J. / Hong, J. / Lambers, E.S. / Pearton, S.J. / Abernathy, C.R. / Hobson, W.S.

Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs

Maeda, T. / Lee, J.W. / Shul, R.J. / Han, J. / Hong, J. / Lambers, E.S. / Pearton, S.J. / Abernathy, C.R. / Hobson, W.S.

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Title:

Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - I. GaAs, GaN, GaP, GaSb and AlGaAs

Contributors:

Maeda, T. (author) / Lee, J.W. (author) / Shul, R.J. (author) / Han, J. (author) / Hong, J. (author) / Lambers, E.S. (author) / Pearton, S.J. (author) / Abernathy, C.R. (author) / Hobson, W.S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 143 ; 174-182

Publication date:

1999-01-01

Size:

9 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Inductively coupled plasma etching of III-V semiconductors in BCl"3-based chemistries - II. InP, InGaAs, InGaAsP, InAs and AlInAs

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Selective dry etching using inductively coupled plasmas - Part I. GaAs/AlGaAs and GaAs/InGaP

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