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    Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

    New search for: Schenk, H.P.D.
    New search for: Kaiser, U.
    New search for: Kipshidze, G.D.
    New search for: Fissel, A.
    New search for: Krauszlich, J.
    New search for: Hobert, H.
    New search for: Schulze, J.
    New search for: Richter, W.

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    Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

    New search for: Schenk, H.P.D.
    New search for: Kaiser, U.
    New search for: Kipshidze, G.D.
    New search for: Fissel, A.
    New search for: Krauszlich, J.
    New search for: Hobert, H.
    New search for: Schulze, J.
    New search for: Richter, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

    New search for: Schenk, H.P.D.
    New search for: Kaiser, U.
    New search for: Kipshidze, G.D.
    New search for: Fissel, A.
    New search for: Krauszlich, J.
    New search for: Hobert, H.
    New search for: Schulze, J.
    New search for: Richter, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

    Contributors:

    Schenk, H.P.D. (author) / Kaiser, U. (author) / Kipshidze, G.D. (author) / Fissel, A. (author) / Krauszlich, J. (author) / Hobert, H. (author) / Schulze, J. (author) / Richter, W. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 84 - 87

    Publication date:

    1999-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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