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Design of a 600 V silicon carbide vertical power MOSFET

Planson, D. / Locatelli, M.L. / Lanois, F. / Chante, J.P.

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Design of a 600 V silicon carbide vertical power MOSFET

Planson, D. / Locatelli, M.L. / Lanois, F. / Chante, J.P.

Design of a 600 V silicon carbide vertical power MOSFET

Planson, D. / Locatelli, M.L. / Lanois, F. / Chante, J.P.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Design of a 600 V silicon carbide vertical power MOSFET

Contributors:

Planson, D. (author) / Locatelli, M.L. (author) / Lanois, F. (author) / Chante, J.P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 497 - 501

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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