A platform for research: civil engineering, architecture and urbanism
Design of a 600 V silicon carbide vertical power MOSFET
Design of a 600 V silicon carbide vertical power MOSFET
Design of a 600 V silicon carbide vertical power MOSFET
Planson, D. (author) / Locatelli, M.L. (author) / Lanois, F. (author) / Chante, J.P. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 497 - 501
1999-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules
British Library Online Contents | 2009
|Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
British Library Online Contents | 2009
|Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities
British Library Online Contents | 2002
|Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers
British Library Online Contents | 2013
|Electron Saturated Vertical Velocities in Silicon Carbide Polytypes
British Library Online Contents | 2000
|