Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Design of a 600 V silicon carbide vertical power MOSFET
Design of a 600 V silicon carbide vertical power MOSFET
Design of a 600 V silicon carbide vertical power MOSFET
Planson, D. (Autor:in) / Locatelli, M.L. (Autor:in) / Lanois, F. (Autor:in) / Chante, J.P. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 497 - 501
01.01.1999
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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