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Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Lu, C.-Y. / Cooper, J. A. / Chung, G. Y. / Williams, J. R. / McDonald, K. / Feldman, L. C.

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Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Lu, C.-Y. / Cooper, J. A. / Chung, G. Y. / Williams, J. R. / McDonald, K. / Feldman, L. C.

Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Lu, C.-Y. / Cooper, J. A. / Chung, G. Y. / Williams, J. R. / McDonald, K. / Feldman, L. C.

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Title:

Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Contributors:

Lu, C.-Y. (author) / Cooper, J. A. (author) / Chung, G. Y. (author) / Williams, J. R. (author) / McDonald, K. (author) / Feldman, L. C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 977-980

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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