Characterization of SiO"2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy: Fid-Bau Portal

Characterization of SiO"2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

Johansson, L.I. / Glans, P.-A. / Wahab, Q. / Grehk, T.M. / Eickhoff, T. / Drube, W.

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Characterization of SiO"2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

Johansson, L.I. / Glans, P.-A. / Wahab, Q. / Grehk, T.M. / Eickhoff, T. / Drube, W.

Characterization of SiO"2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

Johansson, L.I. / Glans, P.-A. / Wahab, Q. / Grehk, T.M. / Eickhoff, T. / Drube, W.

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Document information

Title:

Characterization of SiO"2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

Contributors:

Johansson, L.I. (author) / Glans, P.-A. (author) / Wahab, Q. (author) / Grehk, T.M. (author) / Eickhoff, T. (author) / Drube, W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 150 ; 137-142

Publication date:

1999-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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