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Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy
Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy
Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy
Zhou, H. (author) / Phillipp, F. (author) / Gross, M. (author) / Schroder, H. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 68 ; 26 - 34
1999-01-01
9 pages
Article (Journal)
English
DDC:
620.11
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