Characterization of H-related defects in H-implanted Si with slow positrons: Fid-Bau Portal

Characterization of H-related defects in H-implanted Si with slow positrons

Fujinami, M. / Suzuki, R. / Ohdaira, T. / Mikado, T.

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Characterization of H-related defects in H-implanted Si with slow positrons

Fujinami, M. / Suzuki, R. / Ohdaira, T. / Mikado, T.

Characterization of H-related defects in H-implanted Si with slow positrons

Fujinami, M. / Suzuki, R. / Ohdaira, T. / Mikado, T.

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Check availability in my library

Order at Subito €

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Document information

Title:

Characterization of H-related defects in H-implanted Si with slow positrons

Contributors:

Fujinami, M. (author) / Suzuki, R. (author) / Ohdaira, T. (author) / Mikado, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 149 ; 188-192

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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