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    Atomistic simulation of ion implantation and its application in Si technology

    New search for: Posselt, M.
    New search for: Schmidt, B.
    New search for: Feudel, T.
    New search for: Strecker, N.

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    Atomistic simulation of ion implantation and its application in Si technology

    New search for: Posselt, M.
    New search for: Schmidt, B.
    New search for: Feudel, T.
    New search for: Strecker, N.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Atomistic simulation of ion implantation and its application in Si technology

    New search for: Posselt, M.
    New search for: Schmidt, B.
    New search for: Feudel, T.
    New search for: Strecker, N.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Atomistic simulation of ion implantation and its application in Si technology

    Contributors:

    Posselt, M. (author) / Schmidt, B. (author) / Feudel, T. (author) / Strecker, N. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 128 - 136

    Publication date:

    2000-01-01

    Size:

    9 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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