Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs

    New search for: Zhao, Y. P.
    New search for: Watling, J. R.
    New search for: Kaya, S.
    New search for: Asenov, A.
    New search for: Barker, J. R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs

    New search for: Zhao, Y. P.
    New search for: Watling, J. R.
    New search for: Kaya, S.
    New search for: Asenov, A.
    New search for: Barker, J. R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs

    New search for: Zhao, Y. P.
    New search for: Watling, J. R.
    New search for: Kaya, S.
    New search for: Asenov, A.
    New search for: Barker, J. R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs

    Contributors:

    Zhao, Y. P. (author) / Watling, J. R. (author) / Kaya, S. (author) / Asenov, A. (author) / Barker, J. R. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 72 ; 180 - 183

    Publication date:

    2000-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Source engineering in short channel double gate vertical SiGe-MOSFETs

    Mandal, S. K. / Das, S. / Maiti, C. K. | British Library Online Contents | 2005

    Thin SiGe buffers with high Ge content for n-MOSFETs

    Lyutovich, K. / Bauer, M. / Kasper, E. et al. | British Library Online Contents | 2002

    Point defect diffusion in Si and SiGe revisited through atomistic simulations

    Pochet, P. / Caliste, D. | British Library Online Contents | 2012

    Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    Olsen, S. H. / Dobrosz, P. / Escobedo-Cousin, E. et al. | British Library Online Contents | 2005

    Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic models

    Donnarumma, G. / Wozny, J. / Lisik, Z. | British Library Online Contents | 2009

    Back to top