Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs: Fid-Bau Portal

Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

Olsen, S. H. / Dobrosz, P. / Escobedo-Cousin, E. / Bull, S. J. / O'Neill, A. G.

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Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

Olsen, S. H. / Dobrosz, P. / Escobedo-Cousin, E. / Bull, S. J. / O'Neill, A. G.

Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

Olsen, S. H. / Dobrosz, P. / Escobedo-Cousin, E. / Bull, S. J. / O'Neill, A. G.

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Check availability in my library

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Title:

Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

Contributors:

Olsen, S. H. (author) / Dobrosz, P. (author) / Escobedo-Cousin, E. (author) / Bull, S. J. (author) / O'Neill, A. G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 107-112

Publication date:

2005-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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