Point defect diffusion in Si and SiGe revisited through atomistic simulations: Fid-Bau Portal

Point defect diffusion in Si and SiGe revisited through atomistic simulations

Pochet, P. / Caliste, D.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Point defect diffusion in Si and SiGe revisited through atomistic simulations

Pochet, P. / Caliste, D.

Point defect diffusion in Si and SiGe revisited through atomistic simulations

Pochet, P. / Caliste, D.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Point defect diffusion in Si and SiGe revisited through atomistic simulations

Contributors:

Pochet, P. (author) / Caliste, D. (author) / Bracht, H. / Impellizzeri, G.

Published in:

New Aspects of Si- and Ge-based Materials and Devices ; 675-690

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15

Publication date:

2012-01-01

Size:

16 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

Lyutovich, K. / Kasper, E. / Ernst, F. et al. | British Library Online Contents | 2000

Atomistic simulations of surface diffusion and segregation in ceramics

Lavrentiev, M. Y. / Allan, N. L. / Harding, J. H. et al. | British Library Online Contents | 2006

Atomistic simulations of nanoindentation

Szlufarska, I. | British Library Online Contents | 2006

Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs

Zhao, Y. P. / Watling, J. R. / Kaya, S. et al. | British Library Online Contents | 2000

Semi-empirical atomistic study of point defect properties in BCC transition metals

Olsson, P. A. | British Library Online Contents | 2009