Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon: Fid-Bau Portal

Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon

Popov, V. P. / Antonova, I. V. / Gutakovsky, A. K. / Spesivtsev, E. V. / Morosov, I. I.

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Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon

Popov, V. P. / Antonova, I. V. / Gutakovsky, A. K. / Spesivtsev, E. V. / Morosov, I. I.

Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon

Popov, V. P. / Antonova, I. V. / Gutakovsky, A. K. / Spesivtsev, E. V. / Morosov, I. I.

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Document information

Title:

Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon

Contributors:

Popov, V. P. (author) / Antonova, I. V. (author) / Gutakovsky, A. K. (author) / Spesivtsev, E. V. (author) / Morosov, I. I. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 73 ; 120 - 123

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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