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Numerical simulation for silicon crystal growth of up to 400 mm diameter in Czochralski furnaces
Numerical simulation for silicon crystal growth of up to 400 mm diameter in Czochralski furnaces
Numerical simulation for silicon crystal growth of up to 400 mm diameter in Czochralski furnaces
Takano, K. (author) / Shiraishi, Y. (author) / Iida, T. (author) / Takase, N. (author) / Matsubara, J. (author) / Machida, N. (author) / Kuramoto, M. (author) / Yamagishi, H. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 73 ; 30 - 35
2000-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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