Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Hoglund, L. / Petrini, E. / Asplund, C. et al. | British Library Online Contents | 2006

Suspended aluminum nitride structures grown via metal organic vapor phase epitaxy

Rodak, L. E. / Kuchibhatla, S. / Korakakis, D. | British Library Online Contents | 2009

Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy

Leroux, M. / Beaumont, B. / Grandjean, N. et al. | British Library Online Contents | 1997

Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

Zhaochun, Z. / Xiaoyan, Q. / Deliang, C. et al. | British Library Online Contents | 2000

Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Yoshikane, T. / Urakami, A. / Koizumi, A. et al. | British Library Online Contents | 2004