Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF~6/O~2 Plasma: Fid-Bau Portal

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF~6/O~2 Plasma

Kim, B. S. / Jeong, J. K. / Um, M. Y. / Na, H. J. / Song, I. B. / Kim, H. J.

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Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF~6/O~2 Plasma

Kim, B. S. / Jeong, J. K. / Um, M. Y. / Na, H. J. / Song, I. B. / Kim, H. J.

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF~6/O~2 Plasma

Kim, B. S. / Jeong, J. K. / Um, M. Y. / Na, H. J. / Song, I. B. / Kim, H. J.

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Title:

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF~6/O~2 Plasma

Contributors:

Kim, B. S. (author) / Jeong, J. K. (author) / Um, M. Y. (author) / Na, H. J. (author) / Song, I. B. (author) / Kim, H. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 953-956

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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