Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs

Younghwan Son, / Chang-Ki Baek, / Bomsoo Kim, et al. | IEEE | 2006

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Suzuki, S. / Harada, S. / Kosugi, R. et al. | British Library Online Contents | 2002

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

Cochrane, C.J. / Lenahan, P.M. / Lelis, A.J. | British Library Online Contents | 2012

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Uhnevionak, V. / Strenger, C. / Burenkov, A. et al. | British Library Online Contents | 2013

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Lelis, A.J. / Habersat, D. / Green, R. et al. | British Library Online Contents | 2012