Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions: Fid-Bau Portal

Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Straubinger, T. L. / Bickermann, M. / Grau, M. / Hofmann, D. / Kadinski, L. / Muller, S. G. / Selder, M. / Wellmann, P. J. / Winnacker, A.

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Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Straubinger, T. L. / Bickermann, M. / Grau, M. / Hofmann, D. / Kadinski, L. / Muller, S. G. / Selder, M. / Wellmann, P. J. / Winnacker, A.

Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Straubinger, T. L. / Bickermann, M. / Grau, M. / Hofmann, D. / Kadinski, L. / Muller, S. G. / Selder, M. / Wellmann, P. J. / Winnacker, A.

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Title:

Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Contributors:

Straubinger, T. L. (author) / Bickermann, M. (author) / Grau, M. (author) / Hofmann, D. (author) / Kadinski, L. (author) / Muller, S. G. (author) / Selder, M. (author) / Wellmann, P. J. (author) / Winnacker, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 39-42

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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