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Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Straubinger, T. L. (Autor:in) / Bickermann, M. (Autor:in) / Grau, M. (Autor:in) / Hofmann, D. (Autor:in) / Kadinski, L. (Autor:in) / Muller, S. G. (Autor:in) / Selder, M. (Autor:in) / Wellmann, P. J. (Autor:in) / Winnacker, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 39-42
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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