Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT): Fid-Bau Portal

Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

Basceri, C. / Khlebnikov, I. / Khlebnikov, Y. / Muzykov, P. / Sharma, M. / Stratiy, G. / Silan, M. / Balkas, C. M.

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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

Basceri, C. / Khlebnikov, I. / Khlebnikov, Y. / Muzykov, P. / Sharma, M. / Stratiy, G. / Silan, M. / Balkas, C. M.

Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

Basceri, C. / Khlebnikov, I. / Khlebnikov, Y. / Muzykov, P. / Sharma, M. / Stratiy, G. / Silan, M. / Balkas, C. M.

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Title:

Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

Contributors:

Basceri, C. (author) / Khlebnikov, I. (author) / Khlebnikov, Y. (author) / Muzykov, P. (author) / Sharma, M. (author) / Stratiy, G. (author) / Silan, M. (author) / Balkas, C. M. (author) / Devaty, R. P. / Larkin, D. J.

Published in:

Silicon Carbide and Related Materials - 2005 ; 39-42

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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