The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature: Fid-Bau Portal

The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Senzaki, J. / Fukuda, K. / Imai, S. / Tanaka, Y. / Kobayashi, N. / Tanoue, H. / Okushi, H. / Arai, K.

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The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Senzaki, J. / Fukuda, K. / Imai, S. / Tanaka, Y. / Kobayashi, N. / Tanoue, H. / Okushi, H. / Arai, K.

The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Senzaki, J. / Fukuda, K. / Imai, S. / Tanaka, Y. / Kobayashi, N. / Tanoue, H. / Okushi, H. / Arai, K.

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Title:

The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Contributors:

Senzaki, J. (author) / Fukuda, K. (author) / Imai, S. (author) / Tanaka, Y. (author) / Kobayashi, N. (author) / Tanoue, H. (author) / Okushi, H. (author) / Arai, K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 159-160 ; 544-549

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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