Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon: Fid-Bau Portal

Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon

Li, Y. / Tan, C. / Zhang, J. / Xue, C. / Xu, H. / Liu, P. / Wang, L.

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Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon

Li, Y. / Tan, C. / Zhang, J. / Xue, C. / Xu, H. / Liu, P. / Wang, L.

Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon

Li, Y. / Tan, C. / Zhang, J. / Xue, C. / Xu, H. / Liu, P. / Wang, L.

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Document information

Title:

Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon

Contributors:

Li, Y. (author) / Tan, C. (author) / Zhang, J. (author) / Xue, C. (author) / Xu, H. (author) / Liu, P. (author) / Wang, L. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 77 ; 1 - 5

Publication date:

2000-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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