Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer: Fid-Bau Portal

Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer

Liu, H. / Ye, Z. / Zhang, H. / Zhao, B.

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Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer

Liu, H. / Ye, Z. / Zhang, H. / Zhao, B.

Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer

Liu, H. / Ye, Z. / Zhang, H. / Zhao, B.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer

Contributors:

Liu, H. (author) / Ye, Z. (author) / Zhang, H. (author) / Zhao, B. (author)

Published in:

MATERIALS RESEARCH BULLETIN ; 35 ; 1837-1842

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0025-5408

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11 / 620

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