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Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect Analysis
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect Analysis
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect Analysis
Furusho, T. (author) / Takagi, H. (author) / Ota, S. (author) / Shiomi, H. (author) / Nishino, S. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 107-110
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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