Implantation Temperature Dependent Deep Level Defects in 4H-SiC: Fid-Bau Portal

Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Aberg, D. / Storasta, L. / Hallen, A. / Svensson, B. G.

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Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Aberg, D. / Storasta, L. / Hallen, A. / Svensson, B. G.

Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Aberg, D. / Storasta, L. / Hallen, A. / Svensson, B. G.

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Check availability in my library

Order at Subito €

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Document information

Title:

Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Contributors:

Aberg, D. (author) / Storasta, L. (author) / Hallen, A. (author) / Svensson, B. G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 443-446

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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