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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Lazar, M. (author) / Ottaviani, L. (author) / Locatelli, M. L. (author) / Raynaud, C. (author) / Planson, D. (author) / Morvan, E. (author) / Godignon, P. (author) / Skorupa, W. (author) / Chante, J. P. (author)
MATERIALS SCIENCE FORUM ; 353/356 ; 571-574
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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