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Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC Layers
Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC Layers
Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC Layers
Blanque, S. (author) / Perez, R. (author) / Mestres, N. (author) / Contreras, S. (author) / Camassel, J. (author) / Godignon, P. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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