Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC: Fid-Bau Portal

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

Friedrichs, P. / Mitlehner, H. / Schorner, R. / Kaltschmidt, R. / Dohnke, K. O. / Stephani, D.

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Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

Friedrichs, P. / Mitlehner, H. / Schorner, R. / Kaltschmidt, R. / Dohnke, K. O. / Stephani, D.

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

Friedrichs, P. / Mitlehner, H. / Schorner, R. / Kaltschmidt, R. / Dohnke, K. O. / Stephani, D.

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Title:

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

Contributors:

Friedrichs, P. (author) / Mitlehner, H. (author) / Schorner, R. (author) / Kaltschmidt, R. (author) / Dohnke, K. O. (author) / Stephani, D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 695-698

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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