Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs: Fid-Bau Portal

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Koo, S.-M. / Domeij, M. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E.

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Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Koo, S.-M. / Domeij, M. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E.

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Koo, S.-M. / Domeij, M. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E.

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Title:

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Contributors:

Koo, S.-M. (author) / Domeij, M. (author) / Zetterling, C.-M. (author) / Ostling, M. (author) / Forsberg, U. (author) / Janzen, E. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 773-776

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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