Epitaxial growth of high quality b-FeSi2 layers on Si(111) under the presence of an Sb flux: Fid-Bau Portal

Epitaxial growth of high quality b-FeSi2 layers on Si(111) under the presence of an Sb flux

Koga, T. / Tatsuoka, H. / Kuwabara, H.

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Epitaxial growth of high quality b-FeSi2 layers on Si(111) under the presence of an Sb flux

Koga, T. / Tatsuoka, H. / Kuwabara, H.

Epitaxial growth of high quality b-FeSi2 layers on Si(111) under the presence of an Sb flux

Koga, T. / Tatsuoka, H. / Kuwabara, H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Epitaxial growth of high quality b-FeSi2 layers on Si(111) under the presence of an Sb flux

Contributors:

Koga, T. (author) / Tatsuoka, H. (author) / Kuwabara, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 169-170 ; 310-314

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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