Be- and Mg-ion implantation-induced damage in InSb: Fid-Bau Portal

Be- and Mg-ion implantation-induced damage in InSb

Declemy, A. / Sauvage, T. / Kotai, E. / Leveque, P. / Abd El-Ati, M. I.

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Be- and Mg-ion implantation-induced damage in InSb

Declemy, A. / Sauvage, T. / Kotai, E. / Leveque, P. / Abd El-Ati, M. I.

Be- and Mg-ion implantation-induced damage in InSb

Declemy, A. / Sauvage, T. / Kotai, E. / Leveque, P. / Abd El-Ati, M. I.

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Document information

Title:

Be- and Mg-ion implantation-induced damage in InSb

Contributors:

Declemy, A. (author) / Sauvage, T. (author) / Kotai, E. (author) / Leveque, P. (author) / Abd El-Ati, M. I. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 277-279

Publication date:

2001-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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