A platform for research: civil engineering, architecture and urbanism
Growth of tin nitride thin films by atmospheric pressure chemical vapor deposition using a halide source
Growth of tin nitride thin films by atmospheric pressure chemical vapor deposition using a halide source
Growth of tin nitride thin films by atmospheric pressure chemical vapor deposition using a halide source
Takahashi, N. (author) / Terada, K. (author) / Nakamura, T. (author)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 20 ; 227-228
2001-01-01
2 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of Bulk SiC by Halide Chemical Vapor Deposition
British Library Online Contents | 2004
|Chemical Vapor Deposition of Highly Conjugated, Transparent Boron Carbon Nitride Thin Films
Wiley | 2021
|Atmospheric pressure chemical vapor deposition of titanium dioxide films from TiCl4
British Library Online Contents | 2004
|Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure
British Library Online Contents | 1999
|British Library Online Contents | 2015
|