Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates: Fid-Bau Portal

Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Gaska, R. / Shur, M. S. / Yang, J. W. / Osinsky, A. / Orlov, A. O. / Snider, G. L.

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Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Gaska, R. / Shur, M. S. / Yang, J. W. / Osinsky, A. / Orlov, A. O. / Snider, G. L.

Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Gaska, R. / Shur, M. S. / Yang, J. W. / Osinsky, A. / Orlov, A. O. / Snider, G. L.

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Document information

Title:

Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Contributors:

Gaska, R. (author) / Shur, M. S. (author) / Yang, J. W. (author) / Osinsky, A. (author) / Orlov, A. O. (author) / Snider, G. L. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1445-1448

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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