Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Microstructure of GaN nucleation layer during initial stage MOCVD growth

    New search for: Kim, C. C.
    New search for: Je, J. H.
    New search for: Yi, M. S.
    New search for: Noh, D. Y.
    New search for: Degave, F.
    New search for: Ruterana, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Microstructure of GaN nucleation layer during initial stage MOCVD growth

    New search for: Kim, C. C.
    New search for: Je, J. H.
    New search for: Yi, M. S.
    New search for: Noh, D. Y.
    New search for: Degave, F.
    New search for: Ruterana, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Microstructure of GaN nucleation layer during initial stage MOCVD growth

    New search for: Kim, C. C.
    New search for: Je, J. H.
    New search for: Yi, M. S.
    New search for: Noh, D. Y.
    New search for: Degave, F.
    New search for: Ruterana, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Microstructure of GaN nucleation layer during initial stage MOCVD growth

    Contributors:

    Kim, C. C. (author) / Je, J. H. (author) / Yi, M. S. (author) / Noh, D. Y. (author) / Degave, F. (author) / Ruterana, P. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 108 - 110

    Publication date:

    2001-01-01

    Size:

    3 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

    Chen, Y. / Song, H. / Li, D. et al. | British Library Online Contents | 2014

    Relation between Initial Texture and Microstructure and Nucleation and Growth Mechanisms in Metals

    Bacroix, B. / Brenner, R. / Zhu, K. et al. | British Library Online Contents | 2007

    LP-MOCVD growth of GaN on silicon substrates-comparison between AlAs and ZnO nucleation layers

    Strittmatter, A. / Krost, A. / Turck, V. et al. | British Library Online Contents | 1999

    Growth mode during initial stage of chemical vapor deposition

    Kajikawa, Y. / Noda, S. | British Library Online Contents | 2005

    Nucleation, Growth, and Microstructure of Nanocrystalline Diamond Films

    Gruen, D. M. | British Library Online Contents | 1998

    Back to top