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Oxidation behaviour of Cu thin films on Si wafer at 175-400degreeC

Gao, W. / Gong, H. / He, J. / Thomas, A. / Chan, L. / Li, S.

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Oxidation behaviour of Cu thin films on Si wafer at 175-400degreeC

Gao, W. / Gong, H. / He, J. / Thomas, A. / Chan, L. / Li, S.

Oxidation behaviour of Cu thin films on Si wafer at 175-400degreeC

Gao, W. / Gong, H. / He, J. / Thomas, A. / Chan, L. / Li, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Oxidation behaviour of Cu thin films on Si wafer at 175-400degreeC

Contributors:

Gao, W. (author) / Gong, H. (author) / He, J. (author) / Thomas, A. (author) / Chan, L. (author) / Li, S. (author)

Published in:

MATERIALS LETTERS ; 51 ; 78-84

Publication date:

2001-01-01

Size:

7 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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