Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC: Fid-Bau Portal

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC

Nohira, H. / Kuroiwa, T. / Nakamura, M. / Hirose, Y. / Mitsui, J. / Sakai, W. / Nakajima, K. / Suzuki, M. / Kimura, K. / Sawano, K.

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Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC

Nohira, H. / Kuroiwa, T. / Nakamura, M. / Hirose, Y. / Mitsui, J. / Sakai, W. / Nakajima, K. / Suzuki, M. / Kimura, K. / Sawano, K.

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC

Nohira, H. / Kuroiwa, T. / Nakamura, M. / Hirose, Y. / Mitsui, J. / Sakai, W. / Nakajima, K. / Suzuki, M. / Kimura, K. / Sawano, K.

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Document information

Title:

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC

Contributors:

Nohira, H. (author) / Kuroiwa, T. (author) / Nakamura, M. (author) / Hirose, Y. (author) / Mitsui, J. (author) / Sakai, W. (author) / Nakajima, K. (author) / Suzuki, M. (author) / Kimura, K. (author) / Sawano, K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 237 ; 134-138

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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