Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD: Fid-Bau Portal

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Rack, M. J. / Thornton, T. J. / Ferry, D. K. / Roberts, J. / Westhoff, R. C. / Robinson, M.

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Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Rack, M. J. / Thornton, T. J. / Ferry, D. K. / Roberts, J. / Westhoff, R. C. / Robinson, M.

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Rack, M. J. / Thornton, T. J. / Ferry, D. K. / Roberts, J. / Westhoff, R. C. / Robinson, M.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Contributors:

Rack, M. J. (author) / Thornton, T. J. (author) / Ferry, D. K. (author) / Roberts, J. (author) / Westhoff, R. C. (author) / Robinson, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 87 ; 277 - 281

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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