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Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

Aberg, D. / Hallen, A. / Pellegrino, P. / Svensson, B. G.

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Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

Aberg, D. / Hallen, A. / Pellegrino, P. / Svensson, B. G.

Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

Aberg, D. / Hallen, A. / Pellegrino, P. / Svensson, B. G.

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Check availability in my library

Order at Subito €

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Document information

Title:

Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

Contributors:

Aberg, D. (author) / Hallen, A. (author) / Pellegrino, P. (author) / Svensson, B. G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 263-267

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Hallen, A. / Henry, A. / Pellegrino, P. et al. | British Library Online Contents | 1999

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