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Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
Ottaviani, L. (author) / Kazan, M. (author) / Biondo, S. (author) / Tuomisto, F. (author) / Milesi, F. (author) / Duchaine, J. (author) / Torregrosa, F. (author) / Palais, O. (author) / Yamada-Kaneta, H. / Sakai, A.
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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