Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealings: Fid-Bau Portal

Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealings

Ottaviani, L. / Lazar, M. / Locatelli, M. L. / Monteil, Y. / Heera, V. / Voelskow, M. / Skorupa, W.

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Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealings

Ottaviani, L. / Lazar, M. / Locatelli, M. L. / Monteil, Y. / Heera, V. / Voelskow, M. / Skorupa, W.

Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealings

Ottaviani, L. / Lazar, M. / Locatelli, M. L. / Monteil, Y. / Heera, V. / Voelskow, M. / Skorupa, W.

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Title:

Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealings

Contributors:

Ottaviani, L. (author) / Lazar, M. (author) / Locatelli, M. L. (author) / Monteil, Y. (author) / Heera, V. (author) / Voelskow, M. (author) / Skorupa, W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 330-335

Publication date:

2001-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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