Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer: Fid-Bau Portal

Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer

Derivaz, M. / Noe, P. / Rouviere, J. L. / Buttard, D. / Sotta, D. / Gentil, P. / Barski, A.

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Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer

Derivaz, M. / Noe, P. / Rouviere, J. L. / Buttard, D. / Sotta, D. / Gentil, P. / Barski, A.

Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer

Derivaz, M. / Noe, P. / Rouviere, J. L. / Buttard, D. / Sotta, D. / Gentil, P. / Barski, A.

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Document information

Title:

Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer

Contributors:

Derivaz, M. (author) / Noe, P. (author) / Rouviere, J. L. (author) / Buttard, D. (author) / Sotta, D. (author) / Gentil, P. (author) / Barski, A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 191 - 195

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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