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Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer

Haq, E. / Ni, W. X. / Hansson, G. V.

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Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer

Haq, E. / Ni, W. X. / Hansson, G. V.

Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer

Haq, E. / Ni, W. X. / Hansson, G. V.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer

Contributors:

Haq, E. (author) / Ni, W. X. (author) / Hansson, G. V. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 355 - 359

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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