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    New fabrication of a strained Si/Si1-yGey dual channel on a relaxed Si1-xGex virtual substrate using a Ge-rich layer formed by oxidation

    New search for: Kim, S. H.
    New search for: Bae, H. C.
    New search for: Lee, S. H.

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    New fabrication of a strained Si/Si1-yGey dual channel on a relaxed Si1-xGex virtual substrate using a Ge-rich layer formed by oxidation

    New search for: Kim, S. H.
    New search for: Bae, H. C.
    New search for: Lee, S. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    New fabrication of a strained Si/Si1-yGey dual channel on a relaxed Si1-xGex virtual substrate using a Ge-rich layer formed by oxidation

    New search for: Kim, S. H.
    New search for: Bae, H. C.
    New search for: Lee, S. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    New fabrication of a strained Si/Si1-yGey dual channel on a relaxed Si1-xGex virtual substrate using a Ge-rich layer formed by oxidation

    Contributors:

    Kim, S. H. (author) / Bae, H. C. (author) / Lee, S. H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 6025-6029

    Publication date:

    2008-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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