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    Complementary study of defects in GaN by photo-etching and TEM

    New search for: Weyher, J. L.
    New search for: Macht, L.
    New search for: Tichelaar, F. D.
    New search for: Zandbergen, H. W.
    New search for: Hageman, P. R.
    New search for: Larsen, P. K.

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    Complementary study of defects in GaN by photo-etching and TEM

    New search for: Weyher, J. L.
    New search for: Macht, L.
    New search for: Tichelaar, F. D.
    New search for: Zandbergen, H. W.
    New search for: Hageman, P. R.
    New search for: Larsen, P. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Complementary study of defects in GaN by photo-etching and TEM

    New search for: Weyher, J. L.
    New search for: Macht, L.
    New search for: Tichelaar, F. D.
    New search for: Zandbergen, H. W.
    New search for: Hageman, P. R.
    New search for: Larsen, P. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
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    Document information
    Title:

    Complementary study of defects in GaN by photo-etching and TEM

    Contributors:

    Weyher, J. L. (author) / Macht, L. (author) / Tichelaar, F. D. (author) / Zandbergen, H. W. (author) / Hageman, P. R. (author) / Larsen, P. K. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 280 - 284

    Publication date:

    2002-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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