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Rapid photo-oxidation of silicon at room temperature using 126 nm vacuum ultraviolet radiation

Zhang, J. Y. / Boyd, I. W.

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Rapid photo-oxidation of silicon at room temperature using 126 nm vacuum ultraviolet radiation

Zhang, J. Y. / Boyd, I. W.

Rapid photo-oxidation of silicon at room temperature using 126 nm vacuum ultraviolet radiation

Zhang, J. Y. / Boyd, I. W.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Rapid photo-oxidation of silicon at room temperature using 126 nm vacuum ultraviolet radiation

Contributors:

Zhang, J. Y. (author) / Boyd, I. W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 186 ; 64-68

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Vacuum Ultraviolet Deposition of Silicon Dielectrics

Boyd, I. W. | British Library Online Contents | 1995