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Study of electrically active defects in n-GaN layer

Soh, C. B. / Chi, D. Z. / Ramam, A. / Lim, H. F. / Chua, S. J.

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Study of electrically active defects in n-GaN layer

Soh, C. B. / Chi, D. Z. / Ramam, A. / Lim, H. F. / Chua, S. J.

Study of electrically active defects in n-GaN layer

Soh, C. B. / Chi, D. Z. / Ramam, A. / Lim, H. F. / Chua, S. J.

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Check availability in my library

Order at Subito €

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Document information

Title:

Study of electrically active defects in n-GaN layer

Contributors:

Soh, C. B. (author) / Chi, D. Z. (author) / Ramam, A. (author) / Lim, H. F. (author) / Chua, S. J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 595-600

Publication date:

2001-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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