Carrier compensation behaviors in Si-doped Al~xGa~1~-~xAs epilayers due to thermal annealing: Fid-Bau Portal

Carrier compensation behaviors in Si-doped Al~xGa~1~-~xAs epilayers due to thermal annealing

Lee, H. G. / Kang, T. W. / Kim, T. W.

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Carrier compensation behaviors in Si-doped Al~xGa~1~-~xAs epilayers due to thermal annealing

Lee, H. G. / Kang, T. W. / Kim, T. W.

Carrier compensation behaviors in Si-doped Al~xGa~1~-~xAs epilayers due to thermal annealing

Lee, H. G. / Kang, T. W. / Kim, T. W.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Carrier compensation behaviors in Si-doped Al~xGa~1~-~xAs epilayers due to thermal annealing

Contributors:

Lee, H. G. (author) / Kang, T. W. (author) / Kim, T. W. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 21 ; 49-52

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0261-8028

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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