Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS): Fid-Bau Portal

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Ono, R. / Fujimaki, M. / Senzaki, J. / Tanimoto, S. / Shinohe, T. / Okushi, H. / Arai, K.

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Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Ono, R. / Fujimaki, M. / Senzaki, J. / Tanimoto, S. / Shinohe, T. / Okushi, H. / Arai, K.

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Ono, R. / Fujimaki, M. / Senzaki, J. / Tanimoto, S. / Shinohe, T. / Okushi, H. / Arai, K.

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Title:

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Contributors:

Ono, R. (author) / Fujimaki, M. (author) / Senzaki, J. (author) / Tanimoto, S. (author) / Shinohe, T. (author) / Okushi, H. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 847-850

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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